Uploaded August 2025 | Updated September 2026, 2 weeks ago

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Hafnia Gate dielectrics for energy conversion is a groundbreaking innovation in the field of power semiconductors. Hafnia serves as a direct replacement for traditional silicon dioxide dielectrics and operates under the same conditions, making for a seamless transition to the technology. This research addresses the urgent need for high voltage power semiconductor devices that minimize energy loss and optimize efficiency.

SAND2025-06067V