Uploaded October 2025 | Updated September 2026, 2 weeks ago
Welcome to the Product Training Module for the Infineon CoolSiC 1200 volt G2 MOSFETs, enabling improvements in efficiency, reliability, and total cost of ownership in high-power automotive and industrial applications.
CoolSiC 1200 volt G2 MOSFETs build on the proven trench gate technology used in G1 MOSFETs. 1200 volt G2 MOSFETs offer improved figures of merit for both hard-switching and soft-switching topologies. This is enabled by lower RDS(ON), with values down to 7.5 milliohms compared to 30 milliohms in G1, enhanced switching performance and improved thermal capabilities.
These improvements result in 5 to 20 percent lower losses over typical load use cases, boosting energy efficiency and reducing cooling requirements.
CoolSiC 1200 volt G2 MOSFETs are offered in various packages to fit different applications.
The TO-247 4-pin HC package offers increased creepage distance, thin signal leads, and Kelvin pins to prevent solder bridging, as well as an optimized thermal interface material area for superior thermal performance.
The TO-263-7 package is a compact surface mount option that provides sufficient creepage and clearance for 800 volt systems, minimizing isolation effort in the PCB design.
The top-side cooled Q-DPAK package, with dual half-bridge and single MOSFET options, provides enhanced thermal performance, easier assembly, and allows for an optimized PCB layout to reduce parasitics.
CoolSIC 1200 volt G2 MOSFETs utilize an improved .XT interconnect technology. .XT interconnection uses diffusion soldering with gold-based metallization to replace the standard solder joint between the MOSFET and package leadframe.
This provides better thermal conductivity, and the improved .XT interconnection in G2 devices has 12 percent lower thermal resistance than G1 devices. This results in higher loss dissipation capability, which leads to higher current capability, lower temperature rise, and support for higher switching frequencies.
The G2 devices also offer improved robustness features to enhance reliability.
They can operate with a virtual junction temperature of 200 degrees Celsius and have avalanche robustness for improved handling of overload events.
Infineon specifies the maximum RDSON at 150 degrees, allowing the devices to be fully utilized without additional margins.
They also offer a 2 microsecond short circuit rating, have a wider minus 10 to plus 25 gate-source voltage, and maintain the very low DPM rates demonstrated by CoolSiC 1200 volt G1 MOSFETs.
Engineers can get started with Infineon’s integrated servo motor and drive reference design. This includes a 3-phase inverter board based on a CoolSiC 1200 volt G2 MOSFET and a driver board based on an EiceDRIVER. These 12 centimeter diameter boards are stacked together with a fan and heatsink for a total height of 10 centimeters. An iMOTION control board can be plugged in for simple control, providing an easy-to-use platform for testing and development.
Infineon CoolSiC 1200 volt G2 MOSFETs are suitable for use in all common combinations of AC to DC, DC to DC, and DC to AC stages. The improvements in performance, efficiency, and robustness make them ideal for photovoltaic inverters, energy storage systems, EV charging, power supplies, motion drives, traction inverters, on-board chargers, DC to DC converters, and many other applications.
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Welcome to the Product Training Module for the Infineon CoolSiC 1200 volt G2 MOSFETs, enabling improvements in efficiency, reliability, and total cost of ownership in high-power automotive and industrial applications.
CoolSiC 1200 volt G2 MOSFETs build on the proven trench gate technology used in G1 MOSFETs. 1200 volt G2 MOSFETs offer improved figures of merit for both hard-switching and soft-switching topologies. This is enabled by lower RDS(ON), with values down to 7.5 milliohms compared to 30 milliohms in G1, enhanced switching performance and improved thermal capabilities.
These improvements result in 5 to 20 percent lower losses over typical load use cases, boosting energy efficiency and reducing cooling requirements.
CoolSiC 1200 volt G2 MOSFETs are offered in various packages to fit different applications.
The TO-247 4-pin HC package offers increased creepage distance, thin signal leads, and Kelvin pins to prevent solder bridging, as well as an optimized thermal interface material area for superior thermal performance.
The TO-263-7 package is a compact surface mount option that provides sufficient creepage and clearance for 800 volt systems, minimizing isolation effort in the PCB design.
The top-side cooled Q-DPAK package, with dual half-bridge and single MOSFET options, provides enhanced thermal performance, easier assembly, and allows for an optimized PCB layout to reduce parasitics.
CoolSIC 1200 volt G2 MOSFETs utilize an improved .XT interconnect technology. .XT interconnection uses diffusion soldering with gold-based metallization to replace the standard solder joint between the MOSFET and package leadframe.
This provides better thermal conductivity, and the improved .XT interconnection in G2 devices has 12 percent lower thermal resistance than G1 devices. This results in higher loss dissipation capability, which leads to higher current capability, lower temperature rise, and support for higher switching frequencies.
The G2 devices also offer improved robustness features to enhance reliability.
They can operate with a virtual junction temperature of 200 degrees Celsius and have avalanche robustness for improved handling of overload events.
Infineon specifies the maximum RDSON at 150 degrees, allowing the devices to be fully utilized without additional margins.
They also offer a 2 microsecond short circuit rating, have a wider minus 10 to plus 25 gate-source voltage, and maintain the very low DPM rates demonstrated by CoolSiC 1200 volt G1 MOSFETs.
Engineers can get started with Infineon’s integrated servo motor and drive reference design. This includes a 3-phase inverter board based on a CoolSiC 1200 volt G2 MOSFET and a driver board based on an EiceDRIVER. These 12 centimeter diameter boards are stacked together with a fan and heatsink for a total height of 10 centimeters. An iMOTION control board can be plugged in for simple control, providing an easy-to-use platform for testing and development.
Infineon CoolSiC 1200 volt G2 MOSFETs are suitable for use in all common combinations of AC to DC, DC to DC, and DC to AC stages. The improvements in performance, efficiency, and robustness make them ideal for photovoltaic inverters, energy storage systems, EV charging, power supplies, motion drives, traction inverters, on-board chargers, DC to DC converters, and many other applications.
digikey.com/en/product-highlight/i/infineon/coolsic-g2-1200v-silicon-carbide-mosfet-discretes
Maker.io - digikey.com/en/maker
DigiKey’s Blog – TheCircuit digikey.com/en/blog
Connect with DigiKey on Facebook facebook.com/digikey.electronics
And follow us on X https://x.com/digikey
