Uploaded May 2025 | Updated September 2026, 3 weeks ago
Looking to push the limits of what’s possible with traditional silicon?
InnoScience is doing just that with their latest GaN-on-silicon power solution, designed to simplify design, reduce parasitics, and maximize efficiency in compact spaces.
Key Highlights:
- GaN Integration – Two 100V, 3.2 mΩ InnoGaN HEMTs and driver circuitry packed into a tiny 5x5x1.1 mm LGA package.
- ISG3201 Advantages – Complete half-bridge including driver, resistor, bootstrap, and VCC capacitors.
- Ultra-Low Parasitics – Gate loop and power loop parasitics under 1 nH, reducing voltage spikes during switching.
Perfect for engineers and designers working on compact, high-performance power electronics in everything from consumer tech to industrial systems.
Have you explored GaN for your power designs yet?
#GaNPower #InnoScience #PowerElectronics #Semiconductors #GalliumNitride #EmbeddedSystems #HighEfficiencyDesign #EnergyTech #Innovation
Keywords:
InnoScience GaN, GaN power solution, ISG3201, integrated GaN half-bridge, low parasitic power design, GaN on silicon, high efficiency power electronics, 100V InnoGaN HEMTs, compact power IC, semiconductor innovation
Elektor Magazine: elektormagazine.com
Elektor Store: elektor.com
Partner Up with Elektor: elektormagazine.com/partner-up
Looking to push the limits of what’s possible with traditional silicon?
InnoScience is doing just that with their latest GaN-on-silicon power solution, designed to simplify design, reduce parasitics, and maximize efficiency in compact spaces.
Key Highlights:
- GaN Integration – Two 100V, 3.2 mΩ InnoGaN HEMTs and driver circuitry packed into a tiny 5x5x1.1 mm LGA package.
- ISG3201 Advantages – Complete half-bridge including driver, resistor, bootstrap, and VCC capacitors.
- Ultra-Low Parasitics – Gate loop and power loop parasitics under 1 nH, reducing voltage spikes during switching.
Perfect for engineers and designers working on compact, high-performance power electronics in everything from consumer tech to industrial systems.
Have you explored GaN for your power designs yet?
#GaNPower #InnoScience #PowerElectronics #Semiconductors #GalliumNitride #EmbeddedSystems #HighEfficiencyDesign #EnergyTech #Innovation
Keywords:
InnoScience GaN, GaN power solution, ISG3201, integrated GaN half-bridge, low parasitic power design, GaN on silicon, high efficiency power electronics, 100V InnoGaN HEMTs, compact power IC, semiconductor innovation
Elektor Magazine: elektormagazine.com
Elektor Store: elektor.com
Partner Up with Elektor: elektormagazine.com/partner-up
