Uploaded October 2025 | Updated September 2026, 2 weeks ago

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Speaker: Carlos Toyos Bada | Duration ca. 44 min incl. Q&A

This paper provides an in-depth analysis of the significant advantages offered by ICeGaN™ technology in high-power LLC converters. These converters are critical for demanding applications such as data servers and on-board chargers (OBCs), where efficiency, power density, and reliability are paramount. The discussion will highlight how ICeGaN™ surpasses traditional silicon (Si), silicon carbide (SiC), and discrete GaN solutions.

Key benefits and technical aspects explored include:

- Exceptionally low switching losses and minimal dead times, attributed to ICeGaN™'s inherently low parasitic capacitances and gate charge.
- The unique absence of reverse recovery (Qrr), which further contributes to enhanced efficiency.
- A distinct feature of not requiring negative gate drive, simplifying gate driver design and operation.
- The resulting ability of ICeGaN™ to operate effectively at higher switching frequencies.
- The direct impact of these characteristics on achieving increased power density, significant size reduction of converter designs, and improved thermal management.

#ICeGaN
#LLCConverters
#PowerSystems

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Timestamps:
00:08 Introduction
01:08 Presentation
31:07 Questions and Answers